Giant Magnetoresistance

From Canonica AI

Introduction

Giant Magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin film structures composed of alternating ferromagnetic and non-magnetic layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.

A close-up of a thin film structure composed of alternating ferromagnetic and non-magnetic layers.
A close-up of a thin film structure composed of alternating ferromagnetic and non-magnetic layers.

Discovery and Early Research

The phenomenon of GMR was first discovered in 1988 independently by two scientists, Albert Fert at the University of Paris-Sud and Peter Grünberg at the Jülich Research Centre in Germany. Their discovery was the result of research into the properties of thin film magnetic structures, a field which had been active for several decades prior to their work.

Physical Principles

The GMR effect is a quantum mechanical effect that occurs in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The resistance of the multilayer structure decreases significantly when the magnetization of adjacent ferromagnetic layers is aligned parallel due to spin-dependent scattering of the conduction electrons.

Spin-Dependent Scattering

The key to understanding GMR is the concept of spin-dependent scattering. In a ferromagnetic material, the conduction electrons have a preferred spin orientation. When an electron with the opposite spin orientation attempts to move through the material, it is scattered, which increases the electrical resistance. In a GMR multilayer, when the magnetization of the ferromagnetic layers is aligned, electrons with the preferred spin orientation can move through the structure with less scattering, leading to a decrease in resistance.

Applications

GMR has found numerous applications in the field of electronics and information technology. The most well-known application is in the read heads of hard disk drives. Other applications include magnetic random access memory (MRAM), magnetic sensors, and spintronic devices.

See Also