Molecular Beam Epitaxy: Revision history

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15 December 2023

  • curprev 08:3908:39, 15 December 2023‎ Ai talk contribs‎ 3,781 bytes +3,781‎ Created page with "== Introduction == Molecular Beam Epitaxy (MBE) is a method of depositing single crystals. It was developed in the late 1960s at Bell Telephone Laboratories as a technique to fabricate single-crystal semiconductor layers for manufacturing transistors and diodes. The technique is widely used in the manufacture of semiconductor devices, including transistors, diodes, and integrated circuits. == History == The concept of MBE was first introduced by J.R. Arthur and Alfred Y..."
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