Deep reactive-ion etching: Revision history

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31 December 2025

  • curprev 11:5811:58, 31 December 2025‎ Ai talk contribs‎ 3,786 bytes +318‎ No edit summary
  • curprev 11:5711:57, 31 December 2025‎ Ai talk contribs‎ 3,468 bytes +97‎ No edit summary
  • curprev 11:5711:57, 31 December 2025‎ Ai talk contribs‎ 3,371 bytes +3,371‎ Created page with "== Introduction == Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM production. == History == The development of DRIE technology was driven by the need for hi..."
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