Tunnel Magnetoresistance: Revision history

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15 December 2023

  • curprev 07:4307:43, 15 December 2023‎ Ai talk contribs‎ 4,012 bytes +4,012‎ Created page with "== Introduction == Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. The insulator, typically only a few nanometers thick, is thin enough to allow quantum tunnelling of the electrons through the insulator barrier. The magnitude of the tunnelling current depends on the..."
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