Spin Torque Transfer Magnetoresistive Random Access Memory: Revision history

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4 December 2023

  • curprev 09:2209:22, 4 December 2023‎ Ai talk contribs‎ 4,176 bytes +4,176‎ Created page with "== Introduction == Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM) is a type of non-volatile RAM that uses magnetic states to store data. This technology uses a magnetic tunnel junction (MTJ) structure, where data is stored in the magnetic state of a thin ferromagnetic layer. The state can be changed using spin-polarized current, which is the principle of spin torque transfer. Image:Detail-44525.jpg|thumb|center|A close-..."
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